DataSheetWiki


1N3294 fiches techniques PDF

Digitron Semiconductors - HIGH POWER RECTIFIERS

Numéro de référence 1N3294
Description HIGH POWER RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





1 Page

No Preview Available !





1N3294 fiche technique
1N3288(A)-1N3297(A)
High-reliability discrete products
and engineering services since 1977
HIGH POWER RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Part number
1N3288
1N3289
1N3290
1N3291
1N3292
1N3293
1N3294
1N3295
1N3296
1N3288A
1N3289A
1N3290A
1N3291A
1N3292B
1N3293A
1N3294A
1N3295A
1N3296A
Maximum peak
repetitive reverse
voltage
VRRM
TC = -40° to +200°C
V
100
200
300
400
500
600
800
1000
1200
Maximum non-repetitive peak
reverse voltage
VRSM
TC = 25° to 200°C
V
200
300
400
525
650
800
1050
1300
1600
Maximum direct reverse
voltage
VR
TC = -40° to +200
V
100
200
300
400
500
600
800
1000
1200
Maximum peak reverse
current
IRRM
TC = 130°C
mA
24
24
24
24
21
17
13
11
9
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol Non-A suffix A suffix
Average forward current
IF(AV)
100A
Maximum surge current
1500A
2200A
1600A
2300A
IFSM 1800A
2600A
1900A
2700A
Maximum I2t for fusing
Maximum I2t for individual device fusing
11500 A2s 24000 A2s
I2t 10500 A2s 22000 A2s
16500 A2s 34000 A2s
15000 A2s 31000 A2s
Maximum I2√t for individual device fusing I2√t
165000 A2√s
340000 A2√s
Maximum peak forward voltage
VFM
1.5V
Test Conditions
180° sinusoidal conduction, TC = 130°C
Half cycle, 50Hz sine wave
Half cycle, 60Hz sine wave
Following any rated load
condition and with rated
VRRM applied
Half cycle, 50Hz sine wave
Half cycle, 60Hz sine wave
Following any rated load
condition and with VRRM
applied following
surge = 0.
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
With rated VRRM applied
following surge, initial
TJ = 200°C
With VRRM = 0 following
surge, initial TJ = 200°C
t = 0.1 to 10ms, VRRM = 0 following surge
IFAV = 100A, TC = 130°C
Rev. 20170330

PagesPages 3
Télécharger [ 1N3294 ]


Fiche technique recommandé

No Description détaillée Fabricant
1N329 Diode 300V 275A 2-Pin DO-9 New Jersey Semiconductor
New Jersey Semiconductor
1N3290 (1N3288 - 1N3297) SILICON POWER RECTIFIER Microsemi Corporation
Microsemi Corporation
1N3290 (1N3288 - 1N3297) SILICON POWER DIODE NAINA SEMICONDUCTOR
NAINA SEMICONDUCTOR
1N3290 HIGH POWER RECTIFIERS Digitron Semiconductors
Digitron Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche