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PDF 2N4360 Data sheet ( Hoja de datos )
| Número de pieza | 2N4360 | |
| Descripción | LOW-FREQUENCY/LOW-NOISE JFET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N4360
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
@Total Device Dissipation T^ = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
vDs
Vdg
vgs
Pd
T stg
Value
20
20
20
310
2.82
-55 to +125
Unit
Vdc
Vdc
Vdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
dG = 10 M)
Gate Reverse Current
(VG S =15)
Gate Source Cutoff Voltage
(V DS = -10 V, Dl = 1.0 fiA)
Gate Source Voltage
D<i = o.3mA, yDs = -iov)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(vDS = -iov, vG s = ov)
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance
(ID = 0'Vqs = °' f = 1-0 kHz)
Forward Transfer Admittance
(VqS = - 10 V, Vqs = V, f = I.O kHz)
Output Admittance
(VDS = - 10 V, VGS =
V, f = 1.0 kHz)
Common Source Forward Transconductance
(VDS = -10 V, Vqs = V, f = 1.0 MHz)
Input Capacitance
(VD s = -10 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = -10 V, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vqs = - 10 V, Iq = 10 mA, Rq = 1.0 mil, f = 100 Hz)
CASE 29-02, STYLE 7
TO-92 (TO-226AA)
JFET
LOW-FREQUENCY/LOW-NOISE
—P-CHANNEL DEPLETION
Refer to 2N5460 for graphs.
Symbol
V (BR)GSS
'GSS
v GS(off)
vqs
Min
20
—
0.7
0.4
Max
—
10
10.0
9.0
Unit
Vdc
nA
Vdc
Vdc
! DSS
rds
lYfsl
IVosI
Re(yfs )
C|ss
C rss
NF
3.0
—
2000
—
1500
—
—
—
30 mA
700
8000
100
—
20
5.0
Ohms
/xmhos
/xmhos
/xmhos
PF
PF
5.0 dB
6-37
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N4360.PDF ] | |
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