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PDF 2N4352 Data sheet ( Hoja de datos )
| Número de pieza | 2N4352 | |
| Descripción | MOS FET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
vds
Vdg
Vgs
"G
PD
pd
Tj
T stq
Value
25
30
±30
30
300
1,7
800
4.56
175
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
mVWC
°C
°C
2N4352
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOS FET
SWITCHING
P-CHANNEL — ENHANCEMENT
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
D(l = -10 mA, Vqs = o)
Zero-Gate-Voltage Drain Current
(vDs = - 10 v, vqs = o) ta = 25°c
TA = 150°C
Gate Reverse Current
(Vqs = ±30V, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = -10 V, Dl = -10/iA)
Drain-Source On-Voltage
(Iq = -2.0 mA, Vqs = -10 V)
On-State Drain Current
(Vqs = -iovDS = -lov)
SMALL-SIGNAL CHARACTERISTICS
Drain-Source Resistance
(VGS = -10V,I D = 0, f = 1.0 kHz)
Forward Transfer Admittance
(Vds = -iov. Id = 2.0 mA, f = 1.0 kHz)
Input Capacitance
(Vds = -10 V, Vqs = O, f = 140 kHz)
Reverse Transfer Capacitance
(VDS = 0, Vqs = 0,f = 1 40 kHz)
Drain-Substrate Capacitance
(VD(SUB) = -10 V, f = 140 kHz)
SWITCHING CHARACTERISTICS
Turn-On Delay
(Figures 5)
Rise Time
(Figures 6)
Turn-Off Delay
(Figures 7)
Fall Time
(Figures 8)
Dl = -2.0 mAdc, Vds = -10 Vdc,
VG S - -10 V)
(See Figure 9, Times Circuit Determined)
Symbol
V (BR)DSX
toss
'gss
Min
-25
-
—
v GS(Th)
v DS(on)
!D(on)
r ds(on)
lYfcl
Cj S s
c rss
c d(sub)
td1
tr
td2
tf
-1.0
—
-3.0
—
1000
—
—
—
—
—
—
—
Max
-
-10
-10
±10
Unit
Vdc
nAdc
pAdc
-5.0
-1.0
—
Vdc
V
mA
600 ohms
— /nmho
5.0 PF
1.3 pF
4.0 PF
45 ns
65 ns
60 ns
100 ns
6-33
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N4352.PDF ] | |
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