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Número de pieza | BFY81 | |
Descripción | DUAL AMPLIFIER TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! BFY81
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter, Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
45
Vdc
VEBO
ic
PD
6 Vdc
30 mAdc
One Die Both Die
575 625 mW
3.29
3.57 mW/°<}:
pd 1.8 2.5 Wattsl
10.3
14.3 mW/°C
Tj, Tstg -65 to +200
°C
|
ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted.)
Characteristic
|
Symbol
Max| Min |
Unit
||
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
VCEO(sus)
V(BR)CBO
V(BR)EBO
45
45
6
— Vdc
— Vdc
— Vdc
Collector Cutoff Current
Emitter Cutoff Current
(l£ = 0, Vcb = 40 Vdc)
dE = 0, Vcb = 40 Vdc, Ta = 150°C)
(Ic = 0, Veb = 5.0 \/dc)
'CBO
lEBO
10 nAdc
10 nAdc
10 nAdc
Collector to Emitter Cutoff Current (VcE = 5.0 Vdc, Ib = 0)
ON CHARACTERISTICS
ICEO
10 nAdc
DC Current Gain (Ic = M0 uA, VcE = 5.0 Vdc)
0C = 100 uA, VcE = 5.0 Vdc)
dC = 1-0 mA, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage (Ic = 10 mAdc, Ib = 0.1 mAdc)
Base-Emitter ON Voltage
(Ic = 100 ^Adc, VcE = 5.0 Vdc)
hFE
VCE(sat)
Vbe(ON)
-60
100
150
— 0.35
— 0.7
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Ic = 500 nAdc, Vce - 5.0 Vdc, f = 30 MHz)
Output Capacitance (Vcb = 5.0 Vdc, l£ = 0, f = 140 kHz)
Noise Figure
(Ic = 10 (iAdc, Vce = 5.0 Vdc, Rs = 2 kohms, f = 1 kHz)
fT
C bo
NF
—60 MHz i
— 6.0
r>F
— 4.0 dB
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
Base-Emitter Voltage Differential
(|c = 100 i^Adc, Vce = 5.0 Vdc)
(Ic = 100 nAdc, VcE = 5.0 Vdc)
Base-Emitter Voltage Differential Gradient
(IC = 100 uAdc, Vce = 5 Vdc, Ta = -55°C to+125°C)
(1 ) Pulse Test: Pulse Width == 300 us, Duty Cycle & 2.0%.
(2) Lowest hFE reading is taken as hpE1 for this ratio.
hFEl/hFE2
IVBE1-VBE2I
A(V B E1-VBE2)
at a
0.8
—
—
—
1
;
10 mVdc
25 nv/°c
1
5-38
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet BFY81.PDF ] |
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