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PDF 1N4150 Data sheet ( Hoja de datos )

Número de pieza 1N4150
Descripción HIGH SPEED SILICON SWITCHING DIODE
Fabricantes TRANSYS　
Logotipo TRANSYS Logotipo



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No Preview Available ! 1N4150 Hoja de datos, Descripción, Manual

Transys
Electronics
LIMITED
HIGH SPEED SILICON SWITCHING DIODE
1N4150
DO-35
Glass Axial Package
FEATURES
General Purpose used in Computer and Industrial Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
Reverse Voltage (Continuous)
Forward Current (DC)
Repetitive Peak Forward Current
VR
IF
IFRM
Non Repetitive Peak Surge Current
Power Dissipation @ Ta=25oC
Derating Factor
tp=1µs
tp=1s
IFSM
PTA
Operating And Storage Junction
Temperature Range
Tj, Tstg
VALUE
50
300
600
4000
500
500
2.85
-65 to +200
UNIT
V
mA
mA
mA
mW
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
VF IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IR
VR=50V
VR=50V, Tj=150oC
Cd VR=0, f=1MHz
trr IF=10mA to 200mA to
IR=10mA to 200mA
RL=100Ω
Measured @ IR=0.1xIF
VALUE
MIN MAX
0.54 0.62
0.66 0.74
0.76 0.86
0.82 0.92
0.87 1.0
100
100
2.5
4
IF=200mA to 400mA to
IR=200mA to 400mA
RL=100Ω
Measured @ IR=0.1xIF
6
Forward Recovery Time
IF=10mA to IR=1mA
RL=100Ω
Measured @ IR=0.1mA
tfr Switched from I=0 to IF=200mA
tr=0.4ns, tp=100ns,
Duty Cycle<1.0%
Measured @ VF=1V
6
10
UNIT
V
V
V
V
V
nA
µA
pF
ns
ns
ns
ns

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