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BFR31 fiches techniques PDF

Motorola Semiconductors - JFET

Numéro de référence BFR31
Description JFET
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BFR31 fiche technique
BFR30,31
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
vgs
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RflJA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
25
25
Max
350
2.8
150
357
Unit
Vdc
Vdc
Unit
mW
mW/°C
°C
°C/W
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA/AB)
JFET
AMPLIFIER
N-CHANNEL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 10 Vdc, Vps = 0)
Gate Source Cutoff Voltage
(Ip = 0.5 nAdc, Vqs = 10 Vdc)
BFR30
BFR31
Gate Source Voltage
(Irj = 1.0 mAdc, Vds = 10 Vdc)
BFR30
BFR31
D(l = 50 MAdc, VqS = 10 vdc >
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(v D s = 10 vdc, vG s = o)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
D(l = 1.0 mAdc, Vds = 10 Vdc, f = 1-0 kHz)
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
D(l = 200 /iAdc, Vds = 10 Vdc, f = 1.0 kHz)
Output Admittance
D(l = 1.0 mAdc, Vds = 1° Vdc, f = 1.0 kHz)
D(l = 200juAdc, Vps = 10 Vdc)
Input Capacitance
D(l = 1.0 mAdc, Vds = Vdc, f = 1.0 MHz)
dp = 200 /jAdc. Vps = 10 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
D(l = 1.0 mAdc, Vds = Vdc, f = 1.0 MHz)
D(l = 200 /xAdc, Vps = 10 Vdc, f = 1.0 MHz)
BFR30
BFR31
BFR31
BFR31
Symbol
!GSS
VGS(off)
VQS
>DSS
lYfsl
iYosI
Min
0.7
4.0
1.0
1.0
1.5
0.5
0.75
40
20
Max
0.2
5.0
2.5
3.0
1.3
4.0
2.0
10
5.0
4.0
4.5
25
15
5.0
4.0
1.5
1.5
nAdc
Vdc
Vdc
mAdc
jiAdc
pF
PF
3-33

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