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Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence BCX71J
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BCX71J fiche technique
BCX71G,H,J,K
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO
VCBO
v EBO
'C
Characteristic
•Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
. 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 2.0 mAdc, \q = 0)
Emitter-Base Breakdown Voltage
(|E = 1.0A*Adc, c| = o)
Collector Cutoff Current
(VC e = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
dC = 10 /iAdc, Vqe = 5.0 Vdc)
BCX71Q
BCX71H
BCX71J
BCX71K
dC = 2.0 mAdc, VCE = 5.0 Vdc)
BCX71G
BCX71H
BCX71J
BCX71K
dC = 50 mAdc, Vqe = 1.0 Vdc)
BCX71G
BCX71H
BCX71J
BCX71K
flC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 0.25 mAdc)
dC = 50 mAdc, Ib = 1.25 mAdc)
Base-Emitter Saturation Voltage
flC = 10 mAdc, Ib = 0.25 mAdc)
flC = 50 mAdc, Ib = 1.25 mAdc)
Base-Emitter On Voltage
dC = 2.0 mAdc, VCE = 5.0 Vdc)
Output Capacitance
(VcE = 10 Vdc, lc = 0. f = 1.0 MHz)
BCX71G
BCX71H
BCX71J
BCX71K
Symbol
v (BR)CEO
v(BR)EBO
!CES
Min
hFE
vCE(sat)
v BE(sat)
VBE(on)
Cobo
30
40
100
120
140
250
380
60
80
100
110
125
175
250
350
-
0.6
0.68
0.6
Value
45
45
5.0
100
Max
350
2.8
150
357
Max
220
310
460
630
250
350
500
700
0.25
0.55
0.85
1.05
0.75
6.0
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
„C
°C/W
Unit
Vdc
Vdc
nAdc
/xAdc
Vdc
Vdc
Vdc
PF
3-28

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