J111 Datasheet PDF - Vishay
| Part Number | J111 | |
| Description | N-Channel JFETs | |
| Manufacturers | Vishay | |
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J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111
J/SST112
J/SST113
–3 to –10
–1 to –5
v–3
30
50
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D1
S2
G3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1
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J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
bog
10
gog
1
0.1
100
200 500
f – Frequency (MHz)
1000
Output Characteristics
40
VGS(off) = –4 V
32
VGS = 0 V
24 –0.5
16
8
0
0
–1.0
–1.5
–2.0
–2.5
–3.0
0.2 0.4 0.6 0.8
VDS – Drain-Source Voltage (V)
1.0
SWITCHING TIME TEST CIRCUIT
J/SST111 J/SST112 J/SST113
VGS(L)
RL*
ID(on)
–12 V
800 W
12 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
–7 V
1600 W
6 mA
–5 V
3200 W
3 mA
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Output Characteristics
100
VGS(off) = –4 V
80
60 VGS = 0 V
–0.5
40 –1.0
–1.5
20 –2.0
–2.5
0
0 2 4 6 8 10
VDS – Drain-Source Voltage (V)
Transfer Characteristics
100
VGS(off) = –4 V
VDS = 20 V
80
TA = –55_C
60
25_C
40
20
0
0
125_C
–1 –2 –3 –4
VGS – Gate-Source Voltage (V)
–5
VDD
VGS(H)
VGS(L)
VGS
Scope
RL
OUT
1 kW 51 W
51 W
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for J111 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ J111.PDF Datasheet ] | |
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