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PDF MBR3520R Data sheet ( Hoja de datos )
| Número de pieza | MBR3520R | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR3520 thru MBR3540R
VRRM = 20 V - 40 V
IF = 35 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 110 °C
TC = 25 °C, tp = 8.3 ms
20
14
20
35
600
-55 to 150
-55 to 150
30
21
30
35
600
-55 to 150
-55 to 150
35
25
35
35
600
-55 to 150
-55 to 150
40
28
40
35
600
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Unit
Diode forward voltage
Reverse current
VF IF = 35 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.68
1.5
25
0.68
1.5
25
0.68 0.68 V
1.5
25
1.5
25
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
1.5 1.5 1.5 1.5 °C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR3520R.PDF ] | |
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