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BCY59 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Central Semiconductor - SILICON NPN TRANSISTORS

شماره قطعه BCY59
شرح مفصل SILICON NPN TRANSISTORS
تولید کننده Central Semiconductor 
آرم Central Semiconductor 


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BCY59 شرح
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY58 and BCY59
series types are silicon NPN epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY58
32
BCY59
45
32 45
7.0
100
200
200
340
1.0
-65 to +200
450
150
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BCY58)
32
BVCBO
IC=10μA (BCY59)
45
BVCEO
IC=2.0mA (BCY58)
32
BVCEO
IC=2.0mA (BCY59)
45
BVEBO
IE=1.0μA
7.0
VCE(SAT) IC=10mA, IB=250μA
VCE(SAT) IC=100mA, IB=2.5mA
VBE(SAT) IC=10mA, IB=250μA
0.60
VBE(SAT) IC=100mA, IB=2.5mA
0.75
MAX
10
10
10
0.35
0.70
0.85
1.20
BCY58-VII BCY58-VIII BCY58-IX
BCY59-VII BCY59-VIII BCY59-IX
MIN TYP MAX MIN MAX MIN MAX
hFE VCE=5.0V, IC=10μA
- 20 -
20 -
40 -
hFE VCE=5.0V, IC=2.0mA 120 - 220 180 310 250 460
hFE VCE=1.0V, IC=10mA
80 - -
120 400 160 630
hFE
VCE=1.0V, IC=100mA
40 - -
45 -
60 -
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
BCY58-X
BCY59-X
MIN MAX
100 -
380 630
240 1000
60 -
R2 (8-November 2013)

قانون اساسیصفحه 3
دانلود [ BCY59 دیتاشیت ]



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