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PDF BC394 Data sheet ( Hoja de datos )

Número de pieza BC394
Descripción HIGH VOLTAGE TRANSISTOR
Fabricantes Motorola Semiconductors 
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No Preview Available ! BC394 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS,
Rating
Collector-Emitter Voltage
Cotlector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
Vebo
ic
PD
pd
BC BC
393 394
180 180
180 180
66
I
0.5
0.4
2.66
1.5
10.0
Tj,Tstg -65 to +200
Symbol
Rejc
Max
125
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
BC393
PNP
BC394
NPN
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
HIGH VOLTAGE TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uAdc. Ic = 0)
Collector Cutoff Current
(Vcb = 100 V. Ie = 0)
Collector-Emitter Cutoff
(V C E = 100 V, Bl = 0) (T A mb = 150°C)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 mA, VcE = 10 V)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1 mAdc)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1 mAdc)
DYNAMIC CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EB0
'CBO
ICEO
hFE
VCE(sat)
VBE(sat)
Current Gain Bandwidth Product
dC = 20 mAdc, VcE = 20 Vdc, f = 20 MHz)
Output Capacitance
dE = 0, VcB = 20 Vdc, J = 1 MHz)
Input Capacitance
(IC = 0", Veb = 0.5 Vdc, f = 1 MHz)
Turn-On Time
OBI = 10 mA, Ic = 50 mAdc, Vcc = 100 Vdc))
Turn-Off Time
(lB2 = 10 mAdc, Ic = 50 mAdc, Vcc = 1°0 Vdc))
<' Pulse Test: Pulse Width 300 \is, Duty Cycle =s 2°/c
fT
C bo
Cib
ton
toff
Min
180
180
6
50
50
_
Typ
Max
Unit
Vdc
Vdc
Vdc
nA
50
uA
50
100
0.15
0.7
0.3
0.9
Vdc
Vdc
MHz
110 200
3.5 7
pF
pF
75
100
ns
400
ns
4-209

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