|
|
PDF 2N4237 Data sheet ( Hoja de datos )
| Número de pieza | 2N4237 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N4237 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
2N4237
2N4238
2N4239
CASE 079-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N4237 2N4238 2N4239 Unit
VCEO
vCBO
v EBO
'B
ic
40
50
60
80
6.0
500
1.0
3.0*
80 Vdc
100 Vdc
Vdc
Vdc
Adc
PD
1.0 Watt
5.3 mW/°C
Pd
TJ. Tstg
6.0
34
- 65 to + 200
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
"Thermal Resistance, Junction to Case
Symbol
R&jc
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector-Emitter Sustaining Voltaged)
(IC = 100 mAdc, Bl = 0)
Collector Cutoff Current
(Vce = 50 Vdc, V EB = 1.5 Vdc)
(V C E = 80 Vdc, V EB = 1.5 Vdc)
2N4237
2N4238
2N4239
2N4237
2N4238
vCEO(sus)
] CEX
40
60
80
(V CE = 100 Vdc, V EB = 1.5 Vdc)
(V C e = 30 Vdc, V EB = 1.5 Vdc, TC = 150°C)
2N4239
2N4237
-
(Vce = 50 Vdc, V EB = 1.5 Vdc, Tc = 150°C)
(Vc E = 70 Vdc, V EB = 1.5 Vdc, Tc = 150X)
Collector Cutoff Current
(VCB = Rated V CB o- <E = 0)
(VC e = Rated VcEO- 'b = o>
Emitter Cutoff Current
(V EB = 6.0 Vdc, cl = 0)
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 50 mAdc, Vc E = 1.0 Vdc)
(IC = 250 mAdc, Vc E = 1.0 Vdc)
(IC = 500 mAdc, Vc E = 1.0 Vdc)
(IC = 1.0 Adc, Vc E = 1.0 Vdc)
Collector-Emitter Saturation Voltage(l)
(IC = 500 mAdc, Bl = 50 mAdc)
(IC = 1.0 Adc, Bl = 0.1 Adc)
Base-Emitter Saturation Voltaged)
(IC = 1.0 Adc, Bl = 0.1 Adc)
Base-Emitter On Voltaged)
(IC = 250 mAdc, Vc E = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VcB = 10 Vdc, Cl = 0, f = 0.1 MHz)
Small Signal Current Gain
C(l = 100 mAdc, Vc E = 10 Vdc, f = 1.0 kHz)
—Current Gain High Frequency
(VCE = 10 V, cl = 100 mA, f = 1 MHz)
(1) Pulse Test: Pulse Width =s 300 /xs, Duty Cycle 2.0°/<
"Indicates Data in addition to JEDEC Requirements.
2N4238
2N4239
'CBO
'EBO
-
—
"FE
v CE(sat)
v BE(sat)
v BE(on)
Cobo
hfe
Ihfel
30
30
30
15
—
-
30
1.0
Max
29
Max
—
0.1
0.1
0.1
1.0
1.0
1.0
0.1
.07
0.5
150
—
0.3
0.6
1.5
1.0
100
-
—
Unit
°C/W
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Vdc
pF
-
—
4-160
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N4237.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N4231 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |  Boca Semiconductor Corporation |
| 2N4231 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |  Seme LAB |
| 2N4231 | Trans GP BJT NPN 40V 5A 3-Pin(2+Tab) TO-66 |  New Jersey Semiconductor |
| 2N4231A | POWER TRANSISTORS(5A/75W) |  Mospec Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |