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Microsemi - NPN SILICON DUAL TRANSISTOR

Numéro de référence 2N5794
Description NPN SILICON DUAL TRANSISTOR
Fabricant Microsemi 
Logo Microsemi 





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2N5794 fiche technique
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /495
DEVICES
2N5793
2N5794
2N5794U 2N5794UC
LEVELS
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Symbol
VCEO
VCBO
VEBO
IC
PT
Value
40
75
6.0
600
One Total
Section 1 Device 2
0.5 0.6
Operating & Storage Junction Temperature Range Top, Tstg
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
NOTES:
1. Derate linearly 2.86 mW/°C for TA > +25°C
2. Derate linearly 3.43 mW/°C for TA > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 10mAdc
Symbol Min.
Max.
V(BR)CEO
40
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 50Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
ICBO
10
10
IEBO
10
10
Unit
Vdc
Adc
Adc
Adc
Adc
TO-78
6 PIN SURFACE MOUNT
T4-LDS-0213 Rev. 1 (111181)
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