|
|
Numéro de référence | 1N3899 | ||
Description | FAST RECOVERY RECTIFIERS | ||
Fabricant | Digitron Semiconductors | ||
Logo | |||
1 Page
1N3899-1N3903
High-reliability discrete products
and engineering services since 1977
FAST RECOVERY RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Working peak reverse voltage
Peak repetitive reverse voltage
Operating temperature range
Storage temperature range
Maximum thermal resistance
Mounting torque
Weight
Add “R” to part numbers for reverse polarity.
Symbol
VRWM
VRRM
TJ
Tstg
RθJC
1N3899
50V
50V
1N3900
1N3901
1N3902
100V
200V
300V
100V
200V
300V
-65 to +150°C
-65 to +175°C
1.8°C/W junction to case
25-30 inch pounds
.54 ounces (15.3 grams) typical
1N3903
400V
400V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Average forward current
IF(AV) 20 Amps
Maximum surge current
IFSM 225 Amps
Maximum peak forward voltage
VFM 1.40 Volts
Maximum peak reverse current
IRM 50 µA
Maximum peak reverse current
IRM 6.0 mA
Maximum reverse recovery time
tRR 200ns
Typical junction capacitance
CJ 150pF
Test Conditions
TC = 100°C, square wave, RθJC = 1.8°C/W
8.3ms, half-sine, TC = 100°C
IFM = 63A: TJ = 25°C*
VRRM, TJ = 25°C
VRRM, TJ = 150°C
IF = 1A dc, VR = 30V, di/dt = 25A/µs
VR = 10V, f = 1Mhz, TJ = 25°C
Rev. 20121127
|
|||
Pages | Pages 3 | ||
Télécharger | [ 1N3899 ] |
No | Description détaillée | Fabricant |
1N3890 | FAST RECOVERY RECTIFIER | Digitron Semiconductors |
1N3890 | FAST RECOVERY DIODES | International Rectifier |
1N3890 | FAST RECOVERY RECTIFIERS | Microsemi |
1N3890 | Silicon Fast Recovery Diode | GeneSiC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |