|
|
Numéro de référence | 1N3881R | ||
Description | FAST RECOVERY DIODES | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
FAST RECOVERY DIODES
Bulletin PD-2.030 revG 01/05
1N3879(R), 1N3889(R)
6/ 12/ 16FL(R) SERIES
Stud Version
Major Ratings and Characteristics
Parameters
1N3879- 1N3889-
1N3883 1N3893
6FL
12FL 16FL Units
IF(AV)@ TC = 100°C 6 * 12 * 6 12 16 A
IF(RMS)
9.5 19 9.5 19 25 A
IFSM @50Hz
72 145 110 145 180 A
@ 60Hz 75 * 150 * 115 150 190 A
I2t @50Hz 26 103 60 103 160 A2s
@ 60Hz 23 94 55 94 150 A2s
I2√t 363 856 1452 1452 2290 I2√s
VRRM range
50 to 400 *
50 to 1000
trr range
see table
TJ range
- 65 to 150
* JEDEC registred values.
V
ns
°C
Description
This range of fast recovery diodes is
designed for applications in DC power
supplies, inverters, converters, choppers,
ultrasonic systems and for use as a free
wheeling diode.
Features
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Standard JEDEC types
Stud cathode and stud anode versions
Fullycharacterisedreverserecoveryconditions
case style
DO-203AA (DO-4)
www.irf.com
1
|
|||
Pages | Pages 10 | ||
Télécharger | [ 1N3881R ] |
No | Description détaillée | Fabricant |
1N3881 | Silicon Rectifier | Freescale |
1N3881 | FAST RECOVERY SILICON RECTIFIER | Digitron Semiconductors |
1N3881 | FAST RECOVERY RECTIFIER | SSDI |
1N3881 | Fast Recovery Power Rectifier | Solid State |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |