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1N3890R fiches techniques PDF

GeneSiC - Silicon Fast Recovery Diode

Numéro de référence 1N3890R
Description Silicon Fast Recovery Diode
Fabricant GeneSiC 
Logo GeneSiC 





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1N3890R fiche technique
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3889 thru 1N3893R
VRRM = 50 V - 400 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 100 °C
50 100 200 300 400 V
35 70 140 280 420 V
50 100 200 400 600 V
12 12 12 12 12 A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
90
90
90
90 90
Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Diode forward voltage
Reverse current
VF IF = 12 A, Tj = 25 °C
1.4
1.4
1.4
1.4
1.4 V
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
25
6
25
6
25
6
25 25 μA
6 6 mA
Recovery Time
Maximum reverse recovery
time
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200 200 nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.0 2.0 2.0 2.0 2.0 °C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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