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Galaxy Microelectronics - Silicon Bridge Rectifiers

Numéro de référence KBJ4M
Description Silicon Bridge Rectifiers
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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KBJ4M fiche technique
Production specification
Silicon Bridge Rectifiers
KBJ4A--KBJ4M
FEATURES
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
MECHANCAL DATA
Polarity: Symbols molded on body
Weight: 0.16 ounces,4.45 grams
Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Pb
Lead-free
Characteristic
Symbol
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward Output current
@TA=100
IF(AV)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IFSM
KBJ4A
50
35
50
KBJ4B
100
70
100
KBJ4D
200
140
200
KBJ4G
400
280
400
4.0
150.0
KBJ4J
600
420
600
KBJ4K
800
560
800
KBJ4M
1000
700
1000
UNITS
V
V
V
A
A
Thermal Characteristics
Characteristic
Typical junction capacitance per element
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Symbol
CJ
RθJC
TJ
TSTG
KBJ4A
KBJ4B
KBJ4D KBJ4G KBJ4J
45
2.2
- 55 ---- + 150
- 55 ---- + 150
KBJ4K KBJ4M
UNITS
pF
/W
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ4A KBJ4B KBJ4D KBJ4G KBJ4J
Maximum instantaneous forward voltage
@2.0A
VF
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
IR
NOTES:1. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2. Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.
1.0
10.0
1.0
KBJ4K KBJ4M
UNITS
V
μA
mA
Document Number: KJ4801AA
www.gmicroelec.com
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