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PDF BCX19 Data sheet ( Hoja de datos )
| Número de pieza | BCX19 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
'C
Value
BCX19 BCX20
45 25
50 30
5.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device ADissipation, T = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R flUA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8
150
357
Unit
mW
mW/°C
°c
XA/V
BCX19,20
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mAdc, Ib = 0)
BCX19
BCX20
Collector-Emitter Breakdown Voltage
c(l = 10 AtAdc, C| = 0)
BCX19
BCX20
Collector Cutoff Current
(Vcb = 20 Vdc, Ig = 0)
(VCB = 20 Vdc, Ie = 0, TA = 150°C)
Emitter Cutoff Current
(V BE = 5.0 Vdc, Cl = 0)
ON CHARACTERISTICS
DC Current Gain
(lC
=
100 mAdc, Vce
=
10 Vdc
>
(lC = 300 mAdc, Vce = 10 vdc>
(lC = 500 mAdc, Vce = 1-0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
(lC = 500 mAdc, Vce = 10 vdc >
Symbol
V(BR)CEO
V(BR)CES
'CBO
'EBO
hFE
v CE(sat>
v BE(on)
Min
45
25
50
30
100
70
40
—
—
Typ
-
—
—
Max
Unit
Vdc
Vdc
100 nAdc
5.0 f»Adc
^Adc
600
0.62
1.2
Vdc
Vdc
3-21
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCX19.PDF ] | |
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