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PDF BCW69 Data sheet ( Hoja de datos )
| Número de pieza | BCW69 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BCW69,70
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
v EBO
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ty\ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
'stg
*Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(Jc = 2.0 mAdc, Is = 0)
Collector-Emitter Breakdown Voltage
(IC = 100 niAdc, V EB = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /uAdc, lc = 0)
Collector Cutoff Current
(VCB = 20 Vdc, El = 0)
(VCB = 20 Vdc, lg = 0, Ta = 100°C)
ON CHARACTERISTICS
DC Current Gain
0c = 2.0 mAdc, Vqe = 5.0 Vdc)
Collector-Emitter Saturation Voltage
Oc = 10 mAdc, Ib = 0.5 mAdc)
Base-Emitter On Voltage
PC = 2.0 mAdc, Vqe = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
BCW69
BCW70
Output Capacitance
(IE = 0, VCB = 10 Vdc, f
1.0 MHz)
Noise Figure
dC = 0.2 mAdc, VC E = 5.0 Vdc, R S = 2.0 kll,
BWf = 1.0 kHz,
= 200 Hz)
Symbol
v (BR)CEO
V (BR)CES
v (BR)EBO
ICBO
Min
50
5.0
hFE
vCE(sat)
v BE(on)
120
215
Cobo
Value
45
5.0
100
Max
350
2.8
150
357
Max
100
10
260
500
0.3
0.75
7.0
10
Vdc
mAdc
Unit
mW
mW/°C
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
Vdc
PF
3-18
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCW69.PDF ] | |
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