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BCW69LT1 fiches techniques PDF

Yiguang Electronic - PNP EPITAXIAL SILICON TRANSISTOR

Numéro de référence BCW69LT1
Description PNP EPITAXIAL SILICON TRANSISTOR
Fabricant Yiguang Electronic 
Logo Yiguang Electronic 





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BCW69LT1 fiche technique
SEMICONDUCTOR
BCW69/70LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
Package:SOT-23
Collector-Base Voltage
Vcbo
-50
V
Collector-Emitter Voltage
Vceo
-45
V
Emitter-Base Voltage
Vebo
-5.0
V
Collector Current
Ic -100 mA
Peak Collector Current
Peak Emitter Current
Power Dissipation at TSB=50 (Note1)
Junction Temperature
ICM -200 mA
IEM -200 mA
PD 310 mW
Tj 150
PIN:
STYLE
123
Storage Temperature
Tstg -65-150
ELECTRICAL CHARACTERISTICS at Ta=25
NO.1
BEC
Characteristic
Symbol Min Typ Max Unit
Test Conditions
DC Current Gain Current Gain Group A
(Note2)
BCW69
Current Gain Group A
BCW70
Hfe 120 180 260
215 500
Vce=-5.0V Ic= -2.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Vce(sat)
Vbe(sat)
Vbe -600
-90
-250
-700
-900
-660
Collector-Emitter Cutoff Current
Ices -0.2
Gain Bandwidth Product
fT 150
Collector-Base Capacitance
Noise Figure
Ccbo
NF
2.0
Note1:Device mounted on ceramic substrate 0.7mm 2.5mm2 area.
Note2: Current gain subgroup “c” is not available for BC856.
DEVICE MARKING:
BCW69LT1=H1
BCW70LT1=H2
300 mV Ic= -10mA Ib= -0.5mA
650 Ic= -100mA Ib= -5.0mA
mV Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
-750 mV Vce= -5.0V Ic= -2.0mA
-800 Vce= -5.0V Ic= -10mA
-15 nA Vce= -50V
-4.0 uA Vce= -50V,Tj=125
MHz Vce=-5V
f=100MHz
Ic=-10mA
6.0 pF Vcb= -10V f=1.0MHz
10 dB Vce=-5VIc=-200uA RG=2k
f=1MHz f=200MHz

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