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PDF 2N699 Data sheet ( Hoja de datos )
| Número de pieza | 2N699 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (5 Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Temperature
Temperature Range
Symbol
VCER
VCBO
Vebo
PD
PD
Tj, Tstg
Value
80
120
5.0
0.6
4.0
2.0
13.3
-65 to +200
Unit
Vdc
Vdc
Vdc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
R&JA
Max
75
250
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
dC = 100 mAdc, Rbe = 10 ohms)
Collector Cutoff Current
(V CB = 60 Vdc, l£ = 0)
(Vcb = 60 Vdc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current
(V E B = 2.0 VdcJc = 0)
ON CHARACTERISTICS
DC Current Gain (1)
dC = 150 mAdc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage (1)
dC = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltage (1)
dC = 150 mAdc, lg = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vqe = 10 Vdc, f = 20 MHz)
Output Capacitance
(VC b = 10 Vdc, El = 0, f = 100 kHz)
Input Impedance
C(l = 1.0 mAdc, V C b = 5.0 Vdc, f = 1.0 kHz)
C(l = 5.0 mAdc, V C B = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
C(l = 1.0 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, V C B = 10 Vdc, f = 1.0 khZ)
Small Signal Current Gain
C(l = 1.0 mAdc, V C E = 5.0 Vdc, f = 1.0 kHz)
C(l = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
Output Admittance
(lC = 1.0 mAdc, V C b = 5.0 Vdc, f = 1.0 kHz)
(lC = 5.0 mAdc, V C B = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width s 300 fis, Duty Cycle =s 2.0%.
2N699
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3019 for graphs.
Symbol
V(BR)CER
Icbo
Min
80
'ebo
2.0
200
/iAdc
/^Adc
hFE
v CE(sat)
VBE(sat)
*T
Cobo
"ib
"rb
hfe
hob
50
—
20
-
35
45
0.05
120
— MHz
20 pF
Ohms
30
10
X 10-4
2.5
3.0
100
/nmhos
0.5
1.0
4-3
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N699.PDF ] | |
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