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Numéro de référence | P2N4031 | ||
Description | ONE WATT AMPLIFIER TRANSISTORS | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
P2N4031
P2N4033
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
Pd
Tj, T st g
Symbol
Rejc
R«jc
Value
80
80
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
W
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA)
Collector-Base Breakdown Voltage
C(l =10uA)
Emitter-Base Breakdown Voltage
dE = 10|iA)
Collector Cutoff Current
(Vcb = 60 V)
(VcB = 60 V, Ta = 1 50°C)
Emitter Cutoff Current
(V E B = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, Vce = 5.0 V, -55°C)
P2N4031
P2N4033
dC = 100 |iA, VcE = 5.0 V)
P2N4031
P2N4033
dC = 100 mA, VcE = 5.0 V)
P2N4031
P2N4033
(IC = 500 mA, VcE = 5.0 V)
P2N4031
P2N4033
(IC = 10 A, VcE = 5.0 V)
Collector-Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, Ib = 50 mA)
Base-Emitter Saturation Voltage
(IC = 150 mA, Ib = 15 mA)
(IC = 500 mA, Ib = 50 mA)
P2N4031
P2N4033
Symbol
V(BR)CE0
V(BR)CB0
V(BR)EB0
ICBO
lEBO
hFE
VCE(sat)
VBE(sat)
80
80
5.0
—
~
15
40
30
75
40
100
25
70
10
25
~
—
Max
_
5.0
50
10
120
300
0.15
0.50
0.9
1.1
Unit
V
V
V
nA
uA
nA
V
V
2-294
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Pages | Pages 2 | ||
Télécharger | [ P2N4031 ] |
No | Description détaillée | Fabricant |
P2N4031 | ONE WATT AMPLIFIER TRANSISTORS | Motorola Semiconductors |
P2N4033 | ONE WATT AMPLIFIER TRANSISTORS | Motorola Semiconductors |
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