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Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence 2N6432
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N6432 fiche technique
2N6432
2N6433
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a T^ = 25°C
Derate above 25°C
Total Device Dissipation <S Trj = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
vCBO
vEBO
ic
PD
pd
TJ' Tstg
2N6432 2N6433
200 300
200 300
5.0
500
500
2.86
1.8
10.3
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
Watts
mW/°C
°C
Refer to 2N3743 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO)
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, = 0)
Emitter-Base Breakdown Voltage
(IE = 0-1 mAdc, Ic = 0)
2N6432
2 N 6433
2N6432
2N6433
Collector Cutoff Current
(Vcb = 160 Vdc)
(VC B = 200 Vdc)
Emitter Cutoff Current
(Veb = 3.0 Vdc, Cl =
ON CHARACTERISTICS
2N6432
2N6433
DC Current Gain
dC = 10 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = vdc)
dC = 30 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Bl = 2.0 mAdc)
Base-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 10 mAdc, V C e = 20 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, El = 0, f
1.0 MHz)
(1) Pulse Test: Pulse Width 300 /us, Duty Cycle =s 2.0%.
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
Min
200
300
200
300
5.0
'EBO
hFE
v CE(sat)
v BE(sat)
25
40
30
c cb
Max
0.25
0.25
Unit
Vdc
Vdc
Vdc
/uAdc
/nAdc
150
0.5 Vdc
Vdc
500 MHz
pF
4-202

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