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Motorola Semiconductors - SWITCHING TRANSISTOR

Numéro de référence 2N5861
Description SWITCHING TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N5861 fiche technique
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2N5861
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
v CBO
v EBO
'C
PD
Pd
TJ. Tstg
Value
50
100
6.0
2.0
1.0
6.0
5.0
28.6
-65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/»C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.]
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltaged)
dC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 100 /nAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 10 AiAdc, cl = 0)
Collector Cutoff Current
(VCE = 50 Vdc, V B E(off)
(VCE = 50 Vdc, V B E(off)
2.0 Vdc)
2.0 Vdc, TA = 75°C)
Collector Cutoff Current
(VC B = 50 Vdc, El = 0)
(VCB = 50 Vdc, El = 0, TA =
+75°C
Emitter Cutoff Current
(VBE = 5.0 Vdc, cl = 0)
ON CHARACTERISTICS!!)
DC Current Gain
dC = 500 mAdc, Vqe = 1 Vdc)
Op = 500 miAdc, VC E = 1 .0 Vdc, TA
-55°C)
Collector-Emitter Saturation Voltage
dC = 500 mAdc, Bl = 50 mAdc)
Base-Emitter Saturation Voltage
dC = 500 mAdc, Bl = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(Vbe = 0.5 Vdc, cl = 0, f = 100 kHz)
Turn-On Time
Delay Time
Rise Time
(VC c = 30 Vdc, V B E(off) = 2.0 Vdc,
IC = 500 mAdc, lg-| =50 mAdc)
Symbol
v (BR)CE0
v (BR)CB0
v (BR)EBO
*CEX
Min
6.0
ICBO
lEBO
"FE
v CE(sat)
v BE(sat)
<t 200
-Cc b
Ceb
Max
0.3
10
0.3
10
Unit
Vdc
Vdc
Vdc
/xAdc
/jAdc
/xAdc
Vdc
Vdc
- MHz
7.0 pF
60 pF
4-198

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