DataSheetWiki


2N4029 fiches techniques PDF

Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence 2N4029
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





2N4029 fiche technique
MAXIMUM RATINGS
Rating
2N4026/28 2N4027/29
Symbol 2N4030/32 2N4031/33
Unit
Collector-Emitter Voltage) 1)
VCEO
60
80 Vdc
Collector-Base Voltage
VCBO
60
80 Vdc
Emitter-Base Voltage
VEBO
5.0
5.0 Vdc
Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
"C
PD
PD
Tj. Tstg
2N4026-
2N4029
2N4030-
2N4033
1.0 1.0
.5
2.85
1.25
7.15
2.0
11.4
7.0
40
- 65 to + 200
Adc
W
mW/°C
W
mW/°C
°C
Lead or Terminal Temperature(2)
TL
+ 300
°C
mA(1) Applicable to 10
(2) Measured at a distance not less than 1/16" from seated surface (or case) for 60 Sec.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistagce, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R 9JC
r wa
TO-18
40
280
TO-39
20
140
Unit
°C/W
°c/w
2N4026 thru 2N4033
2N4026-2N4029
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
JAN, JTX, TXV AVAILABLE IN
2N4033
2N4030-2N4033
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
Refer to 2N4405 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mA)
2N4026,28,30,32
2N4027,29,31,33
Collector-Base Breakdown Voltage
C(I = 10 mA)
2N4026,28,30,32
2N4027,29,31,33
Emitter-Base Breakdown Voltage
M)(IE = 10
Collector Cutoff Current
(V C B = 50 V)
(VC B = 60 V)
(VC B = 50 V, Ta = 150°C)
(VC B = 60 V, Ta = 150°C)
Emitter Cutoff Current
(V EB = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
@(IC = 100 mA, Vqe = 5.0 V, -55°C)
2N4026,28,30,32
2N4027,29,31,33
2N4026,28,30,32
2N4027,29,31,33
2N4026,27,30,31
2N4028,29,32,33
C(l = 100 mA, Vce = 5.0 V)
2N4026,27,30,31
2N4028,29,32,33
C(l = 100 mA, Vce = 50 V)
2N4026,27,30,31
2N4028,29,32,33
C(l = 500 mA, Vce = 5.0 V)
2N4026,27,30,31
2N4028,29,32,33
dc
=
i.o a, Vce
=
50 v
>
2N4026,30
2N4027.31
d C = 1.0 a, Vce = 5-ov)
2N4028.32
2N4029,33
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
60
80
60
80
5.0
lEBO
"FE
30
75
40
100
25
70
Unit
nA
50
50
50 ^A
50
^A
120
300
40
25
4-149

PagesPages 2
Télécharger [ 2N4029 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N4026 Bipolar PNP Device Seme LAB
Seme LAB
2N4026 GENERAL PURPOSE TRANSISTOR Motorola Semiconductors
Motorola Semiconductors
2N4027 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package Seme LAB
Seme LAB
2N4027 GENERAL PURPOSE TRANSISTOR Motorola Semiconductors
Motorola Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche