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PDF 2N4014 Data sheet ( Hoja de datos )
| Número de pieza | 2N4014 | |
| Descripción | SILICON NPN TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N4014
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4014 is a silicon
NPN transistor designed for general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
80
40
6.0
1.0
2.0
0.5
1.4
-65 to +200
350
125
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, TA=100°C
ICES
VCE=80V
BVCBO
IC=10µA
80
BVCES
IC=10µA
80
BVCEO
IC=10mA
40
BVEBO
IE=10µA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=100mA, IB=10mA
VCE(SAT) IC=300mA, IB=30mA
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=800mA, IB=80mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=300mA, IB=30mA
VBE(SAT) IC=500mA, IB=50mA
0.80
VBE(SAT) IC=800mA, IB=80mA
VBE(SAT) IC=1.0A, IB=100mA
MAX
1.7
120
10
0.25
0.26
0.40
0.52
0.80
0.95
0.76
0.86
1.1
1.1
1.5
1.7
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R0 (3-October 2016)
1 page  
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CONTACT US
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Central Semiconductor Corp.
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Main Tel: (631) 435-1110
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w w w. c e n t r a l s e m i . c o m
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N4014.PDF ] | |
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