|
|
PDF 2N3798 Data sheet ( Hoja de datos )
| Número de pieza | 2N3798 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N3798 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
2N3798
2N3799
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
vEBO
PD
PD
TJ< Tstg
2N3798 2N3798A
2N3799 2N3799A
Unit
0.36
2.06
1.2
6.86
- 65 to + 200
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance.-Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R 9JC
R 0JA
Max<
)
Unit
°C/mW
"C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
mdC = 10 Adc, Ib = 0)
Collector-Base Breakdown Voltage
(lc = 10 juAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 10 MAdc, cl = o)
Collector Cutoff Current
(Vcb = 50 Vdc, Ie = 0)
(VCB = 50 Vdc, El = 0, TA
150°C)
Emitter Cutoff Current
(Vbe=4.0 Vdc, cl = 0)
ON CHARACTERISTICS
2N3798, 2N3799
2N3798, 2N3799
DC Current Gaind)
dC = I.OjuAdc, VC e
5.0 Vdc)
2N3799
dC = 10 MAdc, Vce = 5.0 Vdc)
2N3798
2N3799
OC = 100 /LtAdc, Vce = 5.0 Vdc)
2N3798
2N3799
dC = 100 /xAdc, VC e = 5.0 Vdc, TA = -55°C)
2N3798
2N3799
dC = 500 /iAdc, Vce = 5.0 Vdc)
2N3798
2N3799
flC = 10 imAdc, Vce = 5.0 Vdc)
2N3798
2N3799
dC = 10 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage! 1)
dC = 100 fiAdc, Bl = 10 MAdc)
dp = 1-0 mAdc, Bl = 100 MAdc)
Base-Emitter Saturation Voltaged)
dC = 100 MAdc, Bl = 10 juAdc)
dC = 10 mAdc, Bl = 100 MAdc)
Base-Emitter On Voltage
dC = 100 Mdc, Vce = 5.0 Vdc)
2N3798
2N3799
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
Min
60
lEBO
"FE
v CE(sat)
v BE(sat)
v BE(on)
100
225
150
300
75
150
150
300
150
300
125
250
Typ Max
Vdc
Vdc
0.01
10
MAdc
450
900
0.2
0.25
0.7
0.8
4-134
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3798.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N3790 | Silicon PNP Power Transistor |  Inchange Semiconductor |
| 2N3790 | SILICON PNP POWER TRANSISTORS |  Boca Semiconductor Corporation |
| 2N3790 | PNP POWER TRANSISTORS |  Central Semiconductor |
| 2N3790 | (2N3789 - 2N3792) Silicon PNP Power Transistor |  MOSPEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |