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PDF 2N4016 Data sheet ( Hoja de datos )
| Número de pieza | 2N4016 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4016 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector 1 to Collector 2 Voltage
Voltage Rating and Lead to Case
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VC1C2
Value
60
±200
±200
Unit
Vdc
Vdc
vCBO
v EBO
IB
60 Vdc
5.0 Vdc
100 mAdc
ic 300 mAdc
One Die Both Die
PD 400
500 mW
2.29
2.86 mW/°C
pd
TJ' Tstg
0.85
4.85
1.4
8.0
- 65 to + 200
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage! 1)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(iC = 10 /iAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 10/xAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 50 Vdc, El = 0)
(VCB = 50 Vdc, Ie = 0, Ta = + 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 0.01 mAdc, Vce = 5.0 Vdc)
(IC = 0.1 mAdc, Vce = 5.0 Vdc)
dC = 1-0 mAdc, Vce = 5.0 Vdc)
flc = 50 mAdc, VC e = 5.0 Vdc)(1)
Collector-Emitter Saturation Voltage(l)
dC = 50 mAdc, Ib = 2.5 mAdc)
Base-Emitter Saturation Voltaged)
dC = 50 mAdc, Vce = 2.5 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2)
dC = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
dC = 1.0 mAdc, Vce = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, El = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, Ic = 0, f = 1.0 MHz)
Input Impedance
dC = 1-0 mAdc, Vce = 10 vdc, f = 1.0 kHz)
Voltage Feedback Ratio
dC = 10 mAdc, Vce = TO Vdc, f = 1.0 kHz)
Small-Signal Current Gain
dC - 1-0 mAdc, Vce = 1 Vdc, f = 1.0 kHz)
2N4015
2N4016
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to MD2905.A for graphs.
Symbol
Min
Max
Unit
v (BR)CEO
v (BR)CBO
v (BR)EBO
60
60
5.0
Vdc
Vdc
!CBO
'EBO
nAdc
/uAdc
0.1 /iAdc
hFE
VCE(sat)
v BE(sat)
80
120
135 350
115
0.25
Vdc
Vdc
C Q bo
Cjbo
MHz
200 600
60
8.0 PF
11.5
PF
kohms
X 10-4
135 420
5-27
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4016.PDF ] | |
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