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Numéro de référence | 2N3727 | ||
Description | DUAL AMPLIFIER TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Collectori to Collector Voltage
Voltage rating any lead to case
Symbol
Value
Unit
vCEO
vCBO
Vebo
IB
•c
PD
45 Vdc
45 Vdc
5.0 Vdc
100 mAdc
300 mAdc
One Die
400
2.29
Both Die
500
2.86
mW
mW/°C
Pd 0.85
4.85
1.4 Watt
8.0 mW/°C
TJ- Tstg
-65 to +200
°C
VC1 VC2
±200
±200
Vdc
Vdc
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 0.01 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 0.01 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 30 Vdc, Ie = 0)
(Vqb = 30 Vdc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 0.01 mAdc, Vce = 5.0 Vdc)
C(l = 0.1 mAdc, Vce = 5.0 Vdc)
c(l = 1.0 mAdc, Vce = 5.0 Vdc)
(lC = 50 mAdc, Vce = 5.0 Vdc)(1)
Collector-Emitter Saturation Voltage(T)
Oc = 50 mAdc, Ib = 2.5 mAdc)
Base-Emitter Saturation VoltageO)
dC = 50 mAdc, Ib = 2.5 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2)
OC
=
1.0 mAdc, Vce
=
10
Vdc
<
f
=
20
MHz
>
c(l = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
Output Capacitance
(vC b = 1 ° Vd c, Ie = o, f = 1.0 mhz)
Input Capacitance
(VEB = 0.5 Vdc, lc = 0, f = 1.0 MHz)
Input Impedance
dC = 1.0 mAdc, Vce = 10 Vdc - f = 1-0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain
c(l = 1.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
2N3726
2N3727
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to MD2905.A for graphs.
Symbol
V(BR)CEO
v (BR)CBO
V(BR)EBO
!CBO
!EBO
Max
Unit
—45 Vdc
—45 Vdc
—5.0 Vdc
- 10 nAdc
10 ^tAdc
— 0.1 juAdc
hFE
v CE(sat)
v BE(sat)
fT
C bo
Cibo
h ie
n re
h fe
80
120
135 350
115
— 0.25
Vdc
— 1.0 Vdc
MHz
60
200 600
— 8.0
PF
— 30 pF
— 11.5
kohm
— 1500
X 10-6
135 420
—
5-21
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Pages | Pages 2 | ||
Télécharger | [ 2N3727 ] |
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