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PDF 2N3425 Data sheet ( Hoja de datos )
| Número de pieza | 2N3425 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N3425
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to MD2369,A,B for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
VCER
VCBO
Vebo
15
20
40
5.0
One Die Both Die
Vdc
Vdc
Vdc
Vdc
Pd 0.3
0.4 Watt
1.72
2.28 mW/°C
pd 0.75
1.5 Watts
4.3 8.55 mW/°C
TJ' Tstg
- 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) dc = 30 mAdc, Rbe * 1
Collector-Emitter Sustaining VoltageO) dc = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dc = 10 /uAdc, Ie = 0)
Emitter-Base Breakdown Voltage (lg = 10 /xAdc, Iq = 0)
ohms)
Collector Cutoff Current (Vce = 20 Vdc, V E B(off) = 0.25 Vdc, TA = 125°C)
Collector Cutoff Current (Vcb = 20 Vdc, lg = 0)
(Vqb = 20 VDc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current (Veb = 4.0 Vdc, Iq = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 0.5 mAdc, Vce = 1-0 Vdc)
dC = 10 mAdc, VC e = 1-0 Vdc)
dC = 10 mAdc, VC e = 1 ° vd c, TA = -55°C)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 7.0 mAdc, Ib = 0.7 mAdc, TA = -55°C to +125X)
Base-Emitter Saturation Voltage dc = 10 mAdc, Ib = 1.0 mAdc)
dC = 7.0 mAdc, Bl = 0.7 mAdc, TA = -55°C)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain
Bandwidth Product
dc
=
20 mAdc, Vce
=
10 vdc f
-
=
1°°
MHz
>
Output Capacitance (V C b = 10 Vdc, El = 0, f = 140 kHz)
Input Capacitance (V B e = 0.5 Vdc, cl = 0, f = 140 kHz)
Small-Signal Current Gain
c(l
=
10 mAdc, Vce
=
10
vdc
-
f
=
1° kHz >
Real Part of Input Impedance
dc
=
10 mAdc, Vce
=
1° vdc f
-
=
300
MHz
>
SWITCHING CHARACTERISTICS
Storage Time
dC = 10 mAdc, Ibi = 10 mAdc, Ib2 = 10 mAdc)
Turn-On Time
< V CC = 3.0 Vdc, VEB(off) = 2.0 Vdc, lc = 10 mAdc, Ibi = 3.0 mAdc)
Turn-Off Time
(Vce = 3.0 Vdc, lc = 10 mAdc, Ibi = 3.0 mAdc, Ib2 = 10 mAdc)
(1) Pulse Test: Pulse Width =s 300 /ms. Duty Cycle =s 1.0%.
Symbol
v CER(sus)
vCEO(sus)
v (BR)CBO
v (BR)EBO
! CEX
'CBO
lEBO
hFE
v CE(sat)
v BE(sat)
fT
C bo
Cjbo
h fe
Re(h ie )
*s
l on
toff
Min
20
15
40
5.0
—
—
-
12
30
12
-
0.7
300
—
—
20
—
-
—
—
—
—
—
—
15
0.025
15
0.2
120
0.4
0.5
0.85
0.9
—
6.0
9.0
—
50
40
50
90
Vdc
Vdc
Vdc
Vdc
/xAdc
/nAdc
/xAdc
—
Vdc
Vdc
MHz
PF
PF
—
Ohms
ns
ns
ns
5-20
1 page | ||
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| PDF Descargar | [ Datasheet 2N3425.PDF ] | |
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