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PDF BCW65C Data sheet ( Hoja de datos )
| Número de pieza | BCW65C | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW65C (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BCW65A,B,C
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO
vCBO
vEBO
ic
Characteristic
*Total Device Dissipation, T^ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstq
'Thermal Resistance Junction to Ambient
R &JA
mmPackage mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characte ristic
"
Symbol Min Typ
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
PC - 10/xAdc, VgB = 0)
Emitter-Base Breakdown Voltage
(IE = 10/iAdc, Ic = 0)
Collector Cutoff Current
(VCE = 32 Vdc, El = 0)
(Vqe = 32 Vdc, Ie = 0, TA
Emitter Cutoff Current
(VE b = 4.0 Vdc, Ic = 0)
ON CHARACTERISTICS
150°C)
DC Current Gain
(IC = 100 [iAdc, Vce
10 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
(IC = 100 mAdc, Vce = 1.0 Vdc)
(IC = 500 mAdc, Vce = 2.0 Vdc
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
(IC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
v (BR)CEO
V (BR)CES
v (BR)EB0
!CES
5.0
'EBO
hFE
vCE(sat)
35
50
80
75
110
180
100
160
250
35
VBE(sat)
Value
32
60
5.0
800
Max
350
2.8
150
357
Max
20
20
250
400
630
0.7
0.3
2.0
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nAdc
fxAdc
nAdc
Vdc
Vdc
3-14
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW65C.PDF ] | |
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