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Numéro de référence | 1N3211 | ||
Description | Silicon Rectifier Diodes | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
www.vishay.com
1N3208 Series
Vishay Semiconductors
Silicon Rectifier Diodes,
(Stud Version) 15 A
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IFSM
I2t
I2t
VRRM
TJ
Note
(1) JEDEC registered values
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
15 (1)
150 (1)
239
250 (1)
286
260
3870
50 to 600
- 65 to 175
UNITS
A
°C
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
1N3208
1N3209
1N3210
1N3211
1N3212
1N3213
1N3214
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
(TJ = - 65 °C TO 175 °C)
V
50 (1)
100 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 175 °C)
V
50 (1)
100 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
Notes
(1) JEDEC registered values
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
Revision: 08-Apr-13
1 Document Number: 93496
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Pages | Pages 5 | ||
Télécharger | [ 1N3211 ] |
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