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PDF BF367 Data sheet ( Hoja de datos )

Número de pieza BF367
Descripción VHF TRANSISTOR
Fabricantes Motorola Semiconductors 
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
RflJC
R«JC
Value
30
40
4.0
25
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BF367
CASE 29-02, STYLE 2
TO-92 (TO-226AA)
VHF TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, Is = 0)
Collector-Base Breakdown Voltage
dC = 100uAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, Ic = 0)
V(BR)CE0
V(BR)CB0
V(BR)EBO
Collector Cutoff Current
(VcB = 10 Vdc, Ie = 0)
ON CHARACTERISTICS
ICBO
DC Current Gain
(IC = 4.0 mAdc, Vce = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 5.0 mAdc)
Base-Emitter On Voltage
dC = 4 mAdc, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
VCE(sat)
VBE(on)
Current Gain-Bandwidth Product
(IC = 4.0 mAdc, Vce = 1 Vdc, f = 1 00 MHz)
Feedback Capacitance (Common Emitter)
(Vce = 1 Vdc, Ie = 1 mA, f = 1 .0 MHz)
fT
Cre
Noise Figure (Figure 3)
(IE « 4.0 mAdc, Vcc ~ 10 Vdc, VAGC = 2.75 Vdc,
RS = 50 Ohms, f = 35 MHz)
Nf
Common-Emitter Amplifier Power Gain (Figure 3)
(IE ~ 4.0 mAdc, Vcc ~ 1 2 Vdc, VaGC = 2.75 Vdc,
RS = 50 Ohms, f = 35 MHz)
Forward AGC Voltage (Figure 3)
(Gain Reduction = 30 dB, Rs = 50 Ohms, f = 35 MHz)
Gpe
VAGC
Min.
30
40
4.0
27
300
Typ.
Max.
Unit
|
Vdc
— — Vdc
— — Vdc
50 nAdc
35
1.5
0.75
200
3.0
0.9
Vdc
Vdc
440
0.2
3.0
0.22
MHz
PF
dB
25 dB
5.5 Vdc
2-159

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