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PDF 2N3460 Data sheet ( Hoja de datos )
| Número de pieza | 2N3460 | |
| Descripción | JFET LOW-FREQUENCY / LOW NOISE | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VDG
. v GS
lG
PD
Tstg
Value
50
50
10
300
1.7
-65 to +175
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
2N3458
2N3459
2N3460
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
JFET
LOW-FREQUENCY/
LOW NOISE
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 /iA)
Gate Reverse Current
(VGS = -30 V)
Gate Source Cutoff Voltage
(V D s = D20, l = 1.0 nA.)
ON CHARACTERISTICS
2N3458
2N3459
2N3460
Zero-Gate-Voltage Drain
(V D s = 20 Volts)
2N3458
2N3459
2N3460
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = 20 Volts, f = 1.0 kHz)
2N3458
2N3459
2N3460
Output Admittance
(Vqs = 30 Volts, f = 1.0 kHz)
2N3458
2N3459
2N3460
Input Capacitance
(V DS = 10 V)
Output Capacitance
(V DS = 30 V)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 10 V, f = 20 Hz, Rq = 1-0 Mil)
2N3458
2N3459
2N3460
•Pulse Width =£ 100 msec, Duty Cycle =s 10%.
Symbol
V(BR)GSS
'GSS
VGS(off)
Min
-50
—
-
'DSS*
IVfsl*
IVosI
Cjss
Cqss
3.0
0.8
0.2
2500
1500
800
-
—
—
—
-.25
-7.8
-3.4
-1.8
15.0
4.0
1.0
10000
6000
4500
35
20
5
18
5.0
Unit
Vdc
nA
Vdc
mA
jimhos
/nmhos
PF
PF
NF dB
— 6.0
— 4.0
— 4.0
6-5
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N3460.PDF ] | |
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