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PDF 2N5786 Data sheet ( Hoja de datos )
| Número de pieza | 2N5786 | |
| Descripción | COMPLEMENTATY SILICON POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N5783 PNP
2N5786 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5783 and
2N5786 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
ΘJC
ΘJA
45
45
40
3.5
3.5
1.0
10
1.0
-65 to +200
17.5
175
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=45V, VBE=1.5V
ICEV
VCE=45V, VBE=1.5V, TC=150°C
ICER
VCE=40V, RBE=100Ω
ICER
VCE=40V, RBE=100Ω, TC=150°C
ICEO
VCE=25V
IEBO
VEB=3.5V
BVCER
IC=10mA, RBE=100Ω
45
BVCEO
IC=10mA
40
VCE(SAT) IC=1.6A, IB=160mA
VCE(SAT) IC=3.2A, IB=800mA
VBE(ON)
VCE=2.0V, IC=1.6A
hFE VCE=2.0V, IC=1.6A
20
hFE VCE=2.0V, IC=3.2A
4.0
fT VCE=2.0V, IC=100mA, f=4.0MHz (2N5783) 8.0
fT VCE=2.0V, IC=100mA, f=200kHz (2N5786) 1.0
hfe VCE=2.0V, IC=100mA, f=1.0kHz
25
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
MAX
10
1.0
10
1.0
100
10
1.0
2.0
1.5
150
UNITS
μA
mA
μA
mA
μA
μA
V
V
V
V
V
60 MHz
4.0 MHz
0.5 μs
5.0 μs
2.5 μs
15 μs
R1 (21-September 2011)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5786.PDF ] | |
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