|
|
Numéro de référence | 2N3418S | ||
Description | NPN Meduim Power Silicon Transistor | ||
Fabricant | Aeroflex | ||
Logo | |||
1 Page
NPN Meduim Power Silicon Transistor
2N3418, 2N3419, 2N3420 & 2N3421
2N3418S, 2N3419S, 2N3420S & 2N3421S
Features
• Available in commercial, JAN, JANTX, JANTXV, JANS
and JANSR 100K rads (Si) per MIL-PRF-19500/393
• TO-5, TO-39 (TO-205AD) Package
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
TP ≤ 1.0 ms, duty cycle ≤ 50%
Total Power Dissipation @ TA = +25 °C
@ TC = +100 °C
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
2N3418, S
2N3420, S
60
2N3419, S
2N3421, S
80
85 125
8.0
3.0
5.0
1.0
5.0
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
W
W
°C
Electrical Characteristics
OFF Characteristics
Collector - Emitter Breakdown Voltage
IC = 50 mAdc
2N3418, S, 2N3420, S
2N3419, S, 2N3421, S
Collector - Emitter Cutoff Current
VCE = 80 Vdc, VBE = -0.5 Vdc 2N3418, S, 2N3420, S
VCE = 120 Vdc, VBE = -0.5 Vdc 2N3419, S, 2N3421, S
Collector - Emitter Cutoff Current
VCE = 45 Vdc
VCE = 60 Vdc
2N3418, S, 2N3420, S
2N3419, S, 2N3421, S
Emitter - Base Cutoff Current
VEB = 6.0 Vdc, IC = 0
VEB = 8.0 Vdc, IC = 0
Symbol
V(BR)CEO
ICEX
ICEO
IEBO
Mimimum
60
80
---
---
---
Maximum
---
Units
Vdc
0.3
0.3
5.0
5.0
0.5
10.0
μAdc
μAdc
μAdc
Revision Date: 4/22/2014
1
|
|||
Pages | Pages 3 | ||
Télécharger | [ 2N3418S ] |
No | Description détaillée | Fabricant |
2N3418 | NPN MEDIUM POWER SILICON TRANSISTOR | Microsemi Corporation |
2N3418 | Power Transistors | UNITRODE |
2N3418 | Trans GP BJT NPN 60V 3A 3-Pin TO-5 | New Jersey Semiconductor |
2N3418 | NPN Medium Power Silicon Transistor | MA-COM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |