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2N3627 fiches techniques PDF

Microsemi - NPN Transistor

Numéro de référence 2N3627
Description NPN Transistor
Fabricant Microsemi 
Logo Microsemi 





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2N3627 fiche technique
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2N3627 (#23118)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet
Qual Data
(none)
Contact Microsemi
Package
TO-5(STD)
Maximum Electrical Rating
Power Dissipation
Collector Current
Breakdown Voltage Collector -to-Base
Voltage Collector to Emitter Open
Voltage Emitter to Base Open
Symbol
Power
IC
BV(CBO)
VCEO
BVEBO
Max Unit
7.5 W
2.5 A
100 V
50 V
4V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=0.1 mA, I C=1 mA, TA=25 ºC,300µ s pulse) VCE(sat)
0.75 V
DC Current Gain
(IC=1 mA, TA=25 ºC,300µ s pulse)
HFE 40
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