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2N5661 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Semicoa Semiconductor - Silicon NPN Transistor

شماره قطعه 2N5661
شرح مفصل Silicon NPN Transistor
تولید کننده Semicoa Semiconductor 
آرم Semicoa Semiconductor 


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2N5661 شرح
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5661J)
JANTX level (2N5661JX)
JANTXV level (2N5661JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
TJ
TSTG
2N5661
Silicon NPN Transistor
Data Sheet
Applications
General purpose
Power Transistor
NPN silicon transistor
Features
Hermetically sealed TO-66 metal can
Also available in chip configuration
Chip geometry 1031
Reference document:
MIL-PRF-19500/454
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
300 Volts
400 Volts
6 Volts
2A
2W
11.4 mW/°C
20 W
200 mW/°C
-65 to +200
°C
Copyright2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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