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Numéro de référence | 2N3763 | ||
Description | PNP SILICON TRANSISTOR | ||
Fabricant | Central Semiconductor | ||
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1 Page
DATA SHEET
2N3762
2N3763
PNP SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed
for core driver applications.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
2N3762
2N3763
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
ΘJA
ΘJC
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
40
40
5.0
1.5
1.0
4.0
60
50
-65 to +200
175
44
V
V
V
A
W
W
°C
°C/W
°C/W
SYMBOL
TEST CONDITIONS
2N3762
MIN MAX
2N3763
MIN MAX
UNITS
IBL
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VCE=½Rated VCBO, VEB=2.0V
VCE=½Rated VCBO, VEB=2.0V
VCB=½Rated VCBO, VEB=2.0V. TA=100°C
IC=10µA
IC=10mA
IE=10µA
IC=10mA, IB=1.0mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=10mA, IB=1.0mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
40
40
5.0
0.90
200
100
10
0.10
0.22
0.50
0.90
0.80
1.00
1.20
1.40
60
50
5.0
0.90
200
100
10
0.10
0.22
0.50
0.90
0.80
1.00
1.20
1.40
nA
nA
µA
V
V
V
V
V
V
V
V
V
V
V
(CONTINUED ON REVERSE SIDE)
R1
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Pages | Pages 2 | ||
Télécharger | [ 2N3763 ] |
No | Description détaillée | Fabricant |
2N3762 | Type 2N3762 Geometry 6706 Polarity PNP | Semicoa Semiconductor |
2N3762 | PNP SIlicon Small-Signal Transistor | Motorola Semiconductors |
2N3762 | PNP SWITCHING SILICON TRANSISTOR | Microsemi |
2N3762 | Bipolar PNP Device | Seme LAB |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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