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2N4898 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2N4898
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N4898 fiche technique
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N4898 2N4899 2N4900
DESCRIPTION
With TO-66 package
Low collector saturation voltage
Excellent safe operating area
2N4900 complement to type 2N4912
APPLICATIONS
Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N4898
VCBO
Collector-base voltage 2N4899
2N4900
2N4898
VCEO
Collector-emitter voltage 2N4899
2N4900
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-1.0
-4.0
-1.0
25
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
7.0
UNIT
/W

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