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Digitron Semiconductors - DUAL GATE MOSFET VHF AMPLIFIER

Numéro de référence 3N209
Description DUAL GATE MOSFET VHF AMPLIFIER
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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3N209 fiche technique
3N209-3N210
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Drain – source voltage
Drain gate voltage
Rating
Gate current
Drain current – continuous
Total power dissipation @ TA = 25°C
Derate above 25°C
Storage channel temperature range
Operating channel temperature
Lead temperature, 1/16” from seated surface for 10 s
Symbol
VDS
VDG1
VDG2
IG1R
IG1F
IG2R
IG2F
ID
PD
Tstg
Tchannel
Value
25
30
-10
10
-10
10
30
3N209
3N210
300
1.71
-65 to 200
350
2.80
-65 to 175
200 150
260
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Drain source breakdown voltage
(ID = 10µAdc, VG1S = -4.0Vdc, VG2S = 4.0Vdc)
Gate 1 – source forward breakdown voltage
(IG1 = 10mAdc, VG2S = VDS = 0)
Gate 1 – source reverse breakdown voltage
(IG1 = -10mAdc, VG2S = VDS = 0)
Gate 2 – source forward breakdown voltage
(IG2 = 10mAdc, VG1S = VDS = 0)
Gate 2 – source reverse breakdown voltage
(IG2 = -10mAdc, VG1S = VDS = 0)
Gate 1 – source cutoff voltage
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 50µAdc)
Gate 2 – source cutoff voltage
(VDS = 15Vdc, VG1S = 0Vdc, ID = 50µAdc)
Gate 1 – terminal forward current
(VG1S = 6.0Vdc, VG2S = VDS = 0)
Gate 1 – terminal reverse current
(VG1S = -6.0Vdc, VG2S = VDS = 0)
(VG1S = -6.0Vdc, VG2S = VDS = 0, TA = 150°C)
Symbol
Min
Typ
Max
V(BR)DS
25
-
-
V(BR)G1SSF
7.0
-
22
V(BR)G1SSR
7.0
-
-22
V(BR)G2SSF
7.0
-
22
V(BR)G2SSR
-7.0
-
-22
VG1S(off)
-0.1
-
-4.0
VG2S(off)
-0.1
-
-4.0
IG1SSF
-
- 20
IG1SSR
-
-
- -20
- -10
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
°C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
nAdc
µAdc
Rev. 20120705

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