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Digitron Semiconductors - DUAL GATE MOSFET VHF AMPLIFIER

Numéro de référence 3N204
Description DUAL GATE MOSFET VHF AMPLIFIER
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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3N204 fiche technique
3N204-3N205
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristic
SMALL SIGNAL CHARACTERISTICS
Forward transfer admittance(3)
(VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz)
Input capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz)
Reverse transfer capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz)
Output capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz)
FUNCTIONAL CHARACTERISTICS
Noise figure
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
Common source power gain
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)
Bandwidth
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
Gain control gate-supply voltage (4)
(VDD = 18Vdc, ΔGps = -30dB, f = 200MHz)
(VDD = 18Vdc, ΔGps = -30dB, f = 45MHz)
Symbol
Min
Typ
Max
3N201, 3N202
3N203
|Yfs|
Ciss
Crss
Coss
8.0 12.8 20
7.0 12.5 15
- 3.3 -
0.005 0.014
0.03
- 1.7 -
3N201
3N203
3N201
3N203
3N202
3N201
3N202
3N203
3N201
3N203
NF
Gps
Gc(5)
BW
VGG(GC)
- 1.8 4.5
- 5.3 6.0
15 20 25
20 25 30
15 19 25
5.0 - 9.0
4.5 - 7.5
3.0 - 6.0
0 -1.0 -3.0
0 -0.6 -3.0
Unit
mmhos
pF
pF
pF
dB
dB
MHz
Vdc
ELECTRICAL CHARACTERISTICS (TC = 25°C)
CHARACTERISTIC
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(lD=10μA, VG1=VG2=-5.0V)
Gate 1-Source Breakdown Voltage
(lG1=+/- 10 mA) Note 1
Gate 2-Source Breakdown Voltage
(lG2=+/-10mA) Note 1
Gate 1 Leakage Current
(VG1S=+/-5.0V, VG2S=VDS=0)
Gate 2 Leakage Current
(VG2S=+/-5.0V, VG1S=VDS=0)
Gate 1 to Source Cutoff Voltage
(VDS=15V, VG2S=4.0V, lD=20μA)
SYMBOL
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
lG1SS
lG2SS
VG1S(off)
MIN
25
+/-6
+/-6
-
-
-0.5
MAX
-
+/-30
+/-30
+/-10
+/-10
-4.0
UNIT
Vdc
Vdc
Vdc
nA
nA
Vdc
Rev. 20120705

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