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PDF 2N4912 Data sheet ( Hoja de datos )
| Número de pieza | 2N4912 | |
| Descripción | SILICON EPITAXIAL NPN TRANSISTOR | |
| Fabricantes | TT | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4912 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
• Low Saturation Voltage Transistor
In A Hermetic Metal Package
• Designed For Driver Circuits, Switching
and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector - Base Voltage
80V
VCEO Collector - Emitter Voltage
80V
VEBO Emitter – Base Voltage
5V
IC Continuous Collector Current
1.0A
IB Base Current
1.0A
PD Total Power Dissipation at Tc = 25°C
25W
Derate Above 25°C
0.143W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
7 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk
Document Number 8104
Issue 1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N4912.PDF ] | |
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