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PDF 2N3701 Data sheet ( Hoja de datos )
| Número de pieza | 2N3701 | |
| Descripción | NPN TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N3700
2N3701
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701
are silicon NPN transistors designed for high current
general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
140
80
7.0
1.0
1.8
500
-65 to +200
350
97.2
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3700
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
- 10
ICBO
VCB=90V, TA=150°C
- 10
IEBO
VEB=5.0V
- 10
BVCBO
IC=100μA
140 -
BVCEO
IC=30mA
80 -
BVEBO
IE=100μA
7.0 -
VCE(SAT) IC=150mA, IB=15mA
- 0.2
VCE(SAT) IC=500mA, IB=50mA
- 0.5
VBE(SAT) IC=150mA, IB=15mA
- 1.1
hFE VCE=10V, IC=0.1mA
50 -
hFE VCE=10V, IC=10mA
90 -
hFE VCE=10V, IC=150mA
100 300
hFE VCE=10V, IC=150mA, TA=-55°C 40 -
hFE VCE=10V, IC=500mA
50 -
hFE VCE=10V, IC=1.0A
15 -
2N3701
MIN MAX
- 10
- 10
- 10
140 -
80 -
7.0 -
- 0.2
- 0.5
- 1.1
30 100
40 120
40 120
--
30 100
15 -
UNITS
V
V
V
A
W
mW
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
R1 (4-March 2014)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3701.PDF ] | |
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