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PDF 2N3700 Data sheet ( Hoja de datos )
| Número de pieza | 2N3700 | |
| Descripción | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3700 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3700
2N3701
TO-18
General purpose amplifier
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
140
Collector -Emitter Voltage
VCEO
80
Emitter -Base Voltage
VEBO
7.0
Collector Current
IC
1.0
Power Dissipation @Ta=25 deg C
PD
500
Derate Above 25 deg C
2.85
@TC=25 deg C
PD
1.8
Derate Above 25 deg C
10.6
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
70
Junction to Ambient
Rth(j-a)
245
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector-Cut off Current
ICBO
VCB=90V, IE=0
-
MAX
10
UNIT
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
UNIT
nA
Emitter-Cut off Current
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Emitter (Sat) Voltage
Base Emitter (Sat) Voltage
DC Current Gain
IEBO
VCBO
VCEO*
VEBO
VCE(Sat)*
VBE(Sat) *
VCB=90V, IE=0
VEB=5V, IC=0
IC=100uA, IE=-0
IC=30mA, IB=0
IE=100uA, IC=-0
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
hFE*
IC=0.1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=500mA,VCE=10V
IC=1A,VCE=10V
Tc= -55 deg C
IC=150mA,VCE=10V
- 10
- 10
140 -
80 -
7.0 -
- 0.2
- 0.5
- 1.1
2N3700 2N3701
>50 30-100
>90 40-12O
100-300 40-12O
>50 30-100
>15 >15
>40 -
uA
nA
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3700.PDF ] | |
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