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PDF 2N3700 Data sheet ( Hoja de datos )

Número de pieza 2N3700
Descripción SILICON NPN TRANSISTOR
Fabricantes TT 
Logotipo TT Logotipo



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No Preview Available ! 2N3700 Hoja de datos, Descripción, Manual

SILICON NPN TRANSISTOR
2N3700
High Voltage, Medium Power Silicon Planar NPN Transistor
Hermetic TO18 Metal Package
High Reliability Screening Options Available
CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
140V
VCEO Collector – Emitter Voltage
80V
VEBO Emitter – Base Voltage
7.0V
IC Continuous Collector Current
1.0A
PD Total Power Dissipation at TA = 25°C
0.5W
Derate Above TA = 25°C
2.9mW/°C
TC = 25°C
1.0W
Derate Above TC = 25°C
5.7mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
350
175
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5266
Issue 2
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