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Número de pieza | 2N3700 | |
Descripción | Low Power Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3700 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 2N3700
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
80
Collector −Base Voltage
VCBO
140
Emitter −Base Voltage
VEBO
7.0
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
IC 1.0
PT 500
Total Device Dissipation @ TC = 25°C
PT 1.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Note 1)
Symbol
RqJA
Max
325
Unit
°C/W
Thermal Resistance, Junction to Case
RqJC
150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This number assumes a substrate of 1 oz. thick copper and a copper area of
550 mm2.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3700
JANTX2N3700
TO−18
Bulk
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1
Publication Order Number:
2N3700/D
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N3700.PDF ] |
Número de pieza | Descripción | Fabricantes |
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2N3700 | GENERAL TRANSISTOR NPN SILICON | Boca Semiconductor Corporation |
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