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Numéro de référence | 2N4033 | ||
Description | PNP SILICON PLANAR TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031
2N4032, 2N4033
TO-39
Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE
AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N4030,32
Collector Emitter Voltage
VCEO
60
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
Collector Current
ICM
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
2N4031, 33
80
80
5
1
800
4.6
4
22.85
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter BreakdownVoltage BVCEO* IC=10mA,IB=0
2N4030, 4032
2N4031, 4033
MIN
60
80
MAX
Collector Base Breakdown Voltage
2N4030, 4032
2N4031, 4033
BVCBO
IC=10µA, IE =0
60
80
Emitter Base Breakdown Voltage
BVEBO IE=10µA, IC =0
5
Collector Leakage Current
ICBO VCB=50V, IE=0
2N4030, 4032
2N4030, 4032
VCB=50V, TA=150ºC
2N4031, 4033
VCB=60V, IE=0
2N4031, 4033
VCB=60V, TA=150ºC
Emitter Leakage Current
IEBO VEB=5V, IC=0
50
50
50
50
10
UNITS
V
V
V
A
mW
mW/ºC
W
mW/ºC
ºC
UNITS
V
V
V
V
V
nA
µA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4
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Pages | Pages 4 | ||
Télécharger | [ 2N4033 ] |
No | Description détaillée | Fabricant |
2N4030 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
2N4030 | Small Signal Transistors | Central Semiconductor Corp |
2N4030 | PNP SILICON PLANAR TRANSISTORS | CDIL |
2N4030 | Bipolar PNP Device | Seme LAB |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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