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PDF 2N3789 Data sheet ( Hoja de datos )
| Número de pieza | 2N3789 | |
| Descripción | PNP POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3789 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N3789 2N3791
2N3790 2N3792
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,
2N3791, and 2N3792 are silicon PNP power transistors,
manufactured by the epitaxial planar process, designed
for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N3789
2N3791
60
2N3790
2N3792
80
60 80
7.0
10
4.0
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3789
2N3791
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEO, VEB=1.5V
- 1.0
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
- 5.0
IEBO
VEB=7.0V
- 5.0
BVCEO IC=200mA
60 -
VCE(SAT) IC=4.0A, IB=400mA (2N3789, 2N3790)
- 1.0
VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792)
- 1.0
VBE(ON) VCE=2.0V, IC=5.0A (2N3789, 2N3790)
- 2.0
VBE(ON) VCE=2.0V, IC=5.0A (2N3791, 2N3792)
- 1.8
VBE(ON) VCE=4.0V, IC=10A
- 4.0
hFE VCE=2.0V, IC=1.0A (2N3789, 2N3790)
25 90
hFE VCE=2.0V, IC=1.0A (2N3791, 2N3792)
50 180
hFE VCE=2.0V, IC=3.0A (2N3789, 2N3790)
15 -
hFE VCE=2.0V, IC=3.0A (2N3791, 2N3792)
30 -
fT VCE=10V, IC=500mA, f=1.0MHz
4.0 -
2N3790
2N3792
MIN MAX
- 1.0
- 5.0
- 5.0
80 -
- 1.0
- 1.0
- 2.0
- 1.8
- 4.0
25 90
50 180
15 -
30 -
4.0 -
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
MHz
R2 (31-July 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3789.PDF ] | |
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