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PDF 2N3791 Data sheet ( Hoja de datos )
| Número de pieza | 2N3791 | |
| Descripción | PNP HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +1000C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly @ 28.57 mW/0C for TA > +250C
2) Derate linearly @ 0.857 mW/0C for TC > +1000C
2N3791 2N3792
60 80
60 80
7.0
4.0
10
5.0
85.7
-65 to +200
Max.
1.17
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N3791
2N3792
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
2N3791
ICES
VCE = 70 Vdc
Collector-Emitter Cutoff Current
2N3792
VCE = 60 Vdc, VBE = 1.5 Vdc
2N3791
ICEX
VCE = 80 Vdc, VBE = 1.5 Vdc
2N3792
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
60
80
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
5.0 mAdc
5.0
5.0 mAdc
5.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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| PDF Descargar | [ Datasheet 2N3791.PDF ] | |
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